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In a Bloch-wave-based STEM image simulation, a framework for calculating the cross section for any incoherent scattering process was formulated by Allen et al. [(2003) Lattice-resolution contrast from a focused coherent electron probe. Part I. Ultramicroscopy 96: 47-63; Part II. ibid. 96: 65-81]. They simulated the high-angle annular dark-field, back-scattered electron, electron energy-loss spectroscopy and energy-dispersive X-ray (EDX) STEM images from the inelastic scattering coefficients. Furthermore, a skilful approach for deriving the excitation amplitude and block diagonalization in the eigenvalue equation was employed to reduce computing time and memory. In the present work, I extended their scheme to a layer-by-layer representation for application to inhomogeneous crystals. Calculations for a multi-layer Si sample including a displaced layer were performed by multiplying Allen et al.'s block-diagonalized matrices. Electron intensities within the sample and EDX STEM images were calculated at various conditions. From the calculations, three-dimensional STEM analysis was considered.
Journal of Electron Microscopy, 59(1), pp.S23-S28; 2010
収録刊行物
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- Journal of Electron Microscopy
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Journal of Electron Microscopy 59 (1), S23-S28, 2010-08
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詳細情報 詳細情報について
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- CRID
- 1050287297274712448
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- NII論文ID
- 120006984972
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- NII書誌ID
- AA00697060
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- ISSN
- 00220744
- 14779986
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- HANDLE
- 10069/25636
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- CiNii Articles