微小角入射X線トポグラフィによる(100)Si表面の格子歪の観察と評価

機関リポジトリ HANDLE Web Site

書誌事項

タイトル別名
  • Characterizaton of Lattice Distortions in (100) Silicon Crystals Using Grazing Incidence X-Ray Topography
  • ビショウカク ニュウシャ Xセン トポグラフィ ニ ヨル (100)Si ヒョウメン ノ コウシワイ ノ カンサツ ト ヒョウカ

この論文をさがす

抄録

Since electric devices become easy to be influenced by local stress with improvement in the degree of accumulation of very large scale integration, the quality of the silicon surfaces on which they are made becomes more and more important. Therefore, it is important to detect minute lattice distortion near the silicon surface with sufficient accuracy. X-ray topography under the condition of simultaneous specular and Bragg reflections is effective for imaging a strain of shallow domain near the surface. In the present study, reflection X-ray topography by Berg-Barrett method using the extremely asymmetric X-ray diffraction and double-crystal arrangement of (+,+) and (+,-) parallel setting of the 311 reflection with CuKαl radiation have been applied to observation of lattice strains in near surface of silicon crystals and silicon epitaxial layer on the silicon substrate. For silicon wafers with 4.6 nm-thick oxide film, and 18 nm-thick aluminum film, local variation in the orientation of the lattice plane occurring at the boundary were observed. Lattice distortion images near the surface produced by the mechanochemical polishing and low-energy N+ ion implantation were clearly visualized. For a wafer with near (100)-oriented surface, and 18 μm thickness epitaxial film grown on <100> silicon substrate, lattice distortions of faint wrinkle-like pattern and short streaks running horizontally were also observed.

収録刊行物

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ