Growth and preliminary MOSFETs of corundum-structured oxide semiconductors

HANDLE Web Site Web Site Web Site Open Access

Bibliographic Information

Other Title
  • コランダム構造酸化物半導体の成長とMOSFET試作
  • コランダム コウゾウ サンカブツ ハンドウタイ ノ セイチョウ ト MOSFET シサク

Search this article

Abstract

Growth of corundum-structured oxide semiconductors has been demonstrated using appropriate buffer layers on sapphire by mist CVD. Emphasis was given for $alpha$-In$_2$O$_3$ allowing reasonable crystalline and electrical properties for power device applications with the use of an $alpha$-Ga$_2$O$_3$ buffer layer on sapphire. An $alpha$-In$_2$O$_3$MOSFET showed the clear pinch-off characteristics with the field effect mobility and effective mobility of 60 and 217 cm$^2$/Vs, respectively. together with the on-off ratio of drain current of 10$^6$. The use of mist CVD for the insulator-semiconductor structure was advantageous for low-cost devices.

Journal

Keywords

Details 詳細情報について

Report a problem

Back to top