Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition
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説明
AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5°C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate.
収録刊行物
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- APPLIED PHYSICS LETTERS
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APPLIED PHYSICS LETTERS 48 (6), 413-414, 1986-02-10
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1050564287444509824
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- NII書誌ID
- AA00543432
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- ISSN
- 00036951
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB