Tailoring Single-Cycle Near Field in a Tunnel Junction with Carrier-Envelope Phase-Controlled Terahertz Electric Fields
抄録
Light-field-driven processes occurring under conditions far beyond the diffraction limit of the light can be manipulated by harnessing spatiotemporally tunable near fields. A tailor-made carrier envelope phase in a tunnel junction formed between nanogap electrodes allows precisely controlled manipulation of these processes. In particular, the characterization and active control of near fields in a tunnel junction are essential for advancing elaborate manipulation of light-field-driven processes at the atomic-scale. Here, we demonstrate that desirable phase-controlled near fields can be produced in a tunnel junction via terahertz scanning tunneling microscopy (THz-STM) with a phase shifter. Measurements of the phase-resolved subcycle electron tunneling dynamics revealed an unexpected large carrier-envelope phase shift between far-field and near-field single-cycle THz waveforms. The phase shift stems from the wavelength-scale feature of the tip–sample configuration. By using a dual-phase double-pulse scheme, the electron tunneling was coherently manipulated over the femtosecond time scale. Our new prescription—in situ tailoring of single-cycle THz near fields in a tunnel junction—will offer unprecedented control of electrons for ultrafast atomic-scale electronics and metrology.
収録刊行物
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- Nano Letters
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Nano Letters 18 (8), 5198-5204, 2018-07-20
American Chemical Society
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詳細情報 詳細情報について
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- CRID
- 1050564287769869312
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- NII論文ID
- 120006533222
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- ISSN
- 15306984
- 15306992
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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