- Other Title
- チュウジョウ Si ナノ コウゾウ ニ オケル キョクショ デンキ デンドウ ト デンシ ホウシュツ トクセイ ヒョウカ
- Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures
Search this article
A highly-dense Si nanocolumnar structure accompanied with Si nanocrystals was fabricated on a W layer /quartz by inductively-coupled plasma enhanced CVD and treated with anodic oxidation. And after the formation of a few nanometer thick Au layer as a top-electrode, electron transport properties through Si nanocolumnar structures so-prepared were characterized by means of atomic force microscopy (AFM) with a conductive cantilever in both contact and non-contact modes. When the W bottom electrode was biased at -23V with respect to the grounded Au-top electrode, a current increase of the order of 〜3pA was detected in several areas corresponding to Si nanocolumns even in the condition that the distance between the sample surface and the AFM probe was kept constant typically at 200nm. The result is attributable to the electron emission as a result of inelastic transport through Si nanocrystals via nanocolumnar structure.
- 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 112 (34), 95-98, 2012-05-10