Bibliographic Information
- Other Title
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- ヒタイショウ ナノブリッジ オ リヨウ シタ コウオン チョウデンドウ デバイス ノ トクセイ
- The Properties of High-Temperature Superconducting Devices with Asymmetrical Nanobridges
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Abstract
For practical applications of SFQ circuits, it is necessary to decrease power consumption at the current-limiting resistors placed after the power supply. One of the candidates for the solutions is using rectifiers based on asymmetrical nanobridges. The vortex ratchet effect arises in asymmetrical nanobridges, causing asymmetrical I-V characteristics for asymmetrical nanobridges. By utilizing this ratchet effect, semiconductor-like diodes can be made with zero threshold voltage, which make it possible to form rectifiers applicable to SFQ circuits. In this study, we report the properties of high-temperature superconducting (HTS) devises with asymmetrical nanobridges The SQUIDs fabricated exhibit periodic behavior in magnetic field dependence of critical currents and that of voltages.
IEICE Technical Report;SCE2013-56
Journal
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- 電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス
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電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス 113 (401), 123-128, 2014-01
一般社団法人電子情報通信学会
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Keywords
Details 詳細情報について
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- CRID
- 1050564288758170240
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- NII Article ID
- 110009822133
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- NII Book ID
- AA1123312X
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- HANDLE
- 2237/23808
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- NDL BIB ID
- 025280254
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- ISSN
- 09135685
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- Text Lang
- ja
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- Article Type
- journal article
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- Data Source
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- IRDB
- NDL
- CiNii Articles