AN STM OBSERVATION OF THE INITIAL PROCESS OF GRAPHITIZATION AT THE 6H-SiC(000¯1) SURFACE

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  • An STM Observation of the Initial Process of Graphitization at the 6H-SiC(000¯1) Surface

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We applied scanning tunneling microscopy (STM) as well as low-energy electron diffraction (LEED)to an analysis of the initial process of graphitization at 6H-SiC(000¯1) surfaces. After annealing a6H-SiC(000¯1) surface at 1200◦C, there appeared many domains with a single graphite layer in theSTM image. Each graphite domain was azimuthally disordered to each other. Many large and smalldomains with various periodicities were observed in the STM image taken after annealing the surfaceat temperatures higher than 1300◦C. This STM image can be explained as Moir´e patterns due todifferent combinations of two graphite layers. In a LEED pattern azimuthally-rotated graphite 1×1spots are observed together with the fundamental SiC(0001)1×1 spots, in consistent with the STMresult.

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