Ambipolar Transport in Bilayer Organic Field-Effect Transistor Based on Poly(3-hexylthiophene) and Fullerene Derivatives

DOI 機関リポジトリ HANDLE Web Site Web Site ほか1件をすべて表示 一部だけ表示 被引用文献4件 参考文献23件

この論文をさがす

抄録

Ambipolar characteristics in an organic field-effect transistor (FET) with a bilayer structure consisting of poly(3-hexylthiophene) (P3HT) and a fullerene derivative (PCBM) are reported. P3HT was deposited by a floating film transfer method (FTM) with toluene solution on spin-coated PCBM. The FTM-deposited film was found to show relatively high hole mobility even when cast using toluene solution. Even after coating P3HT on PCBM by FTM, a relatively high n-type transport was obtained. This indicates that FTM employed in this study is a mild way to coat an organic thin film on an organic semiconductor layer in terms of minimizing the effect of carrier transport in the underlayer. The transport characteristics have been discussed in comparison with those of ambipolar FETs prepared by other methods previously reported.

収録刊行物

被引用文献 (4)*注記

もっと見る

参考文献 (23)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ