A Cadmium-Free Cu<sub>2</sub>ZnSnS<sub>4</sub>/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes
書誌事項
- タイトル別名
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- A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes
- A cadmium-free Cu2ZnSnS4/ZnO heterojunction solar cell prepared by practicable processes
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A cadmium-free Cu2ZnSnS4/ZnO hetrojunction solar cell with conversion efficiency of 4.29% has been obtained. The Cu2ZnSnS4 absorber film was formed utilizing sulfurization of laminated metallic precursors, and the ZnO buffer layer was then deposited on it by ultrasonic spray pyrolysis. In comparison with a conventional Cu2ZnSnS4/CdS hetrojunction solar cell, the open circuit voltage as well as the relative quantum efficiency at the short-wavelength regions was increased. The in-plane homogeneity of p-n junction was improved by depositing the ZnO layer on Cu2ZnSnS4 film via ultrasonic spray pyrolysis. (C) 2011 The Japan Society of Applied Physics
Article
JAPANESE JOURNAL OF APPLIED PHYSICS. 50(3): 032301 (2011)
収録刊行物
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- JAPANESE JOURNAL OF APPLIED PHYSICS
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JAPANESE JOURNAL OF APPLIED PHYSICS 50 (3), 032301-, 2011
JAPAN SOC APPLIED PHYSICS
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詳細情報 詳細情報について
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- CRID
- 1050564288879650944
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- NII論文ID
- 120007101098
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- HANDLE
- 10091/00019197
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- NDL書誌ID
- 11054333
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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