Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy
説明
We investigated at 4.2 K the differential conductance (dI/dV) versus V characteristics of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions (MTJs) featuring high tunnel magnetoresistance ratios of about 700% at 4.2 K (about 180% at room temperature). We developed a tunneling model to explain the observed tunneling spectra and showed the critical role played by interface states for minority spins existing around the Fermi level of Co2MnSi electrodes facing a MgO tunnel barrier in the spin-dependent tunneling characteristics of these MTJs with half-metallic electrodes.
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 94 (9), 092503-, 2009-03-04
American Institute of Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1050564288965465856
-
- ISSN
- 10773118
- 00036951
-
- HANDLE
- 2115/50604
-
- 本文言語コード
- en
-
- 資料種別
- journal article
-
- データソース種別
-
- IRDB
- Crossref
- KAKEN
- OpenAIRE
