GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets
Search this article
Abstract
GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchets were fabricated and characterized. From three-dimensional potential simulation results and current–voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate device or a multiple-symmetric-gate device. The current direction and input frequency dependences of the net current indicated that the observed current was generated by the flashing-ratchet mechanism.
Journal
-
- Japanese Journal of Applied Physics(JJAP)
-
Japanese Journal of Applied Physics(JJAP) 52 (6), 06-, 2013-06
IOP Publishing
- Tweet
Details 詳細情報について
-
- CRID
- 1050564288977437824
-
- NII Article ID
- 120006324923
- 40019677754
-
- NII Book ID
- AA12295836
-
- ISSN
- 13474065
- 00214922
-
- HANDLE
- 2115/66636
-
- NDL BIB ID
- 024643865
-
- Text Lang
- en
-
- Article Type
- journal article
-
- Data Source
-
- IRDB
- NDL
- CiNii Articles