スパッタ法によるIrSnO2の作製とエレクトロクロミック特性

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タイトル別名
  • Deposition and electrochromic property of IrSnO2 prepared by sputtering
  • スパッタホウ ニ ヨル IrSnO2 ノ サクセイ ト エレクトロクロミック トクセイ

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説明

IrSnO2 thin film have deposited by Ratio Frequency sputtering on ITO substrate. Cyclic voltammetry indicated a peak current below 200℃. From peak current and voltage of oxidation and reduction, this value was effect to stability and colouring and bleaching time. Crystallization could be observed above 100℃ from XRD results. Grain size increased and surface roughness decreased with increasing substrate temperature from SEM and AFM. Density of IrSnO2 thin films was smaller than that of SnO2 from X-ray reflectivity. Could be obtained at low substrate temperature obtained high current density, low density and high roughness.

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