TLZ 法によるIn(0.1)Ga(0.9)As 基板作製とPL 測定による評価

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  • Preparation of In(0.1)Ga(0.9)As substrates by the TLZ method and their characterization by PL measurements

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第22回宇宙利用シンポジウム(2006年1月17日-19日, 日本学術会議6階会議室 六本木、東京)

The Twenty-second Space Utilization Symposium (January 17-19, 2006: Science Council of Japan, Roppongi, Tokyo, Japan)

We have succeeded in growing In(0.1)Ga(0.9)As plate crystals for substrate use by the traveling liquidus-zone (TLZ) method. Excellent compositional uniformity with InAs mole fraction of 0.1 +/- 0.005 and good crystallinity with 0.04 deg of FWHM of X-ray rocking curve were obtained. In order to evaluate crystal quality, MQW layers were grown on these substrates and PL spectra from the MQW layers were measured. Sharp and narrow PL peaks show high quality of the substrates as well as the grown thin films.

形態: カラー図版あり

共催: 日本学術会議

Physical characteristics: Original contains color illustrations

Meeting sponsors: The Science Council of Japan, The Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (ISAS)(JAXA)

資料番号: AA0064113009

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