Influence of source/drain parasitic resistance on device performance of ultrathin body 3-5 channel metal-oxide-semiconductor field-effect transistors
書誌事項
- タイトル別名
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- Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors
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説明
The influence of source/drain (S/D) parasitic resistance in ultrathin body (UTB) III–V channel metal–oxide–semiconductor field-effect transistor (MOSFET) was investigated based on Monte Carlo simulation. We found that heavily doped S/D improves source starvation and suppresses carrier's backscattering from drain to channel, owing to increased electron–electron scattering. As a result, the heavily doped S/D was shown to be effective to enhance the current drive and transconductance of UTB III–V channel MOSFET. In addition, we demonstrated that the heavily doped S/D has the advantage to provide unsaturated drain current characteristics.
収録刊行物
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- Applied Physics Express
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Applied Physics Express 4 (8), 084301-084301(3), 2011-08-25
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1050575520348144896
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- NII論文ID
- 10029467335
- 210000015179
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- NII書誌ID
- AA12295133
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- ISSN
- 18820786
- 18820778
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- HANDLE
- 20.500.14094/90001633
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- NDL書誌ID
- 11211845
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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