フォトリフレクタンス法による波状超格子構造の光学的評価

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  • Optical Characterization of wire-on-well structure by Photoreflectance measurements

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When InGaAs/GaAs/GaAsP superlattices were grown on vicinal substrates, the superlattice rippled and InGaAs wire on well (WoW) structure was obtained. In order to evaluate the band structure of WoW, we performed the photoreflectance (PR) measurements and compared the critical energies with sample containing planar superlattice (PSL) structure. In the PR measurements, peaks were observed below the band gap of GaAs substrate in both sample. We also performed the theoretical calculations of energy-band lineup and quantum levels using nextnano software. We identified an obtained PR peak of PSL sample as the energy originating from the transition between 1st electron level (e1) and 1st heavy hole level (hh1). On the other hand, calculations for WoW sample showed the transition energy changed over a wide range in corresponding to well width. Among them, the transition energy between e1 and hh1 of 2-nm well width was in agreement with an obtained PR peak of WoW sample. This suggests that in the WoW, the transition occurs predominantly in the quantum well with a narrower well width.

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