High mobility of (111)-oriented large-domain (>100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films
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- Kajiwara, Takashi
- Department of Electronics, Kyushu University
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- Shimoda, Otokichi
- Faculty of Engineering, University of the Ryukyus
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- Okada, Tatsuya
- Faculty of Engineering, University of the Ryukyus
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- Charith Jayanada Koswaththage
- Faculty of Engineering, University of the Ryukyus
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- Noguchi, Takashi
- Faculty of Engineering, University of the Ryukyus
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- Sadoh, Taizoh
- Department of Electronics, Kyushu University
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Description
Rapid-thermal annealing (RTA) of InSb precursor films, deposited by sputtering using an Ar plasma at room temperature, has been investigated to achieve high carrier mobility on low-cost glass substrates. Although InSb films containing residual Ar (∼1%) were partially lost by evaporation during RTA, such evaporation during RTA is suppressed by reducing the residual Ar to ∼0.3%. The crystallinity of the films is significantly increased by RTA at temperatures above 400 °C. The electron mobilities of the films increase with increasing RTA temperature up to 490 °C, showing the maximum values (9000–10 000 cm^2 V^<−1> s^<−1>) at 490 °C, and then, the mobilities decrease at RTA temperatures above 490 °C. The mobilities of 9000–10 000 cm^2 V^<−1> s^<−1> are obtained for films with a wide range of thickness (300–1000 nm) grown at 490 °C. Detailed analysis indicated that the high carrier mobilities are realized by preferentially (111)-oriented large crystal domains (diameter: >100 μm), obtained by the regrowth of randomly oriented small grains, together with a low barrier height (16 meV) at the sub-domain boundaries (twin boundaries) in the large domains. The RTA after the sputtering technique will facilitate high-performance InSb-based devices with low production costs.
Journal
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- Journal of Applied Physics
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Journal of Applied Physics 132 145302-, 2022-10-11
AIP Publishing
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Keywords
Details 詳細情報について
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- CRID
- 1050581456521969152
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- NII Book ID
- AA00693547
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- ISSN
- 10897550
- 00218979
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- HANDLE
- 2324/7172265
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB