Silicon Carbide and Its Nanostructures

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Description

Silicon carbide (SiC) is a promising ceramic for various industrial applications thanks to its excellent properties at high temperature, high power, high frequency, high radiation environment and chemically harsh conditions. Substantial efforts have been made to develop new approaches to the synthesis of SiC and its nanostructures. Nanostructured SiC including nanoparticles and one-dimensional (1D) structures are superior to their bulk counterpart in many properties, and have attracted considerable attention in recent years due to their important role in basic science and their potential applications in electronic and optoelectronic devices, and composite reinforcement. This paper outlines the various methods for fabricating SiC nanostructures.

Journal

Details 詳細情報について

  • CRID
    1050845762421110400
  • NII Article ID
    120005974603
  • NII Book ID
    AA12617342
  • ISSN
    21876738
  • Web Site
    http://id.nii.ac.jp/1476/00002378/
  • Text Lang
    en
  • Article Type
    departmental bulletin paper
  • Data Source
    • IRDB
    • CiNii Articles

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