Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
書誌事項
- 公開日
- 2000-04-03
- 資源種別
- journal article
- 公開者
- American Institute of Physics
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説明
An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.
収録刊行物
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- APPLIED PHYSICS LETTERS
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APPLIED PHYSICS LETTERS 76 (14), 1804-1806, 2000-04-03
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1050845762422441728
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- NII書誌ID
- AA00543432
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- ISSN
- 00036951
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB