- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Automatic Translation feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Evaluating Origin of Electron Traps in Tris(8-hydroxyquinoline) Aluminum Thin Films using Thermally Stimulated Current Technique
Search this article
Description
We measured the energy distributions and concentrations of electron traps in O_2-unexposed and O_2-exposed tris(8-hydroxyquinoline) aluminum (Alq_3) films using a thermally stimulated current (TSC) technique to investigate how doping O_2 molecules in Alq_3 films affect the films' electron trap and electron transport characteristics. The results of our TSC studies revealed that Alq_3 films have an electron trap distribution with peak depths ranging from 0.075 to 0.1 eV and peak widths ranging from 0.06 and 0.07 eV. Exposing the Alq_3 films to O_2 atmosphere induced a marked increase in electron trap concentration, indicating that electron traps with an energy distribution originate from O_2 molecules absorbed in Alq_3 films. We measured the current density-voltage characteristics of these films. The driving and turn-on voltages of the O_2-exposed Alq_3 film became higher than those of the O_2-unexposed Alq_3 film owing to the increase in electron trap concentration caused by the O_2 doping of the Alq_3 films.
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/8788
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 47 (3), 1748-1752, 2008
The Japan Society of Applied Physics
