Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing

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We perform transmission electron microscopy investigation of the microstructures of poly-Si films formed through explosive crystallization induced by flash lamp annealing of precursor amorphous silicon (a-Si) films. Two characteristic regions, formed periodically as a result of EC, show different microstructures: one consists of randomly oriented, densely packed fine grains of approximately 10 nm in size, whereas the other has relatively large (>100 nm), stretched grains, probably formed through liquid-phase epitaxy onto solid-phase-nucleated grains. Little a-Si tissue surrounding grains can be observed in the lattice images of flash-lamp-crystallized poly-Si films, which would be favorable for the rapid transport of photo-carriers.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/9864

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