Electrical properties of CuI films prepared by spin coating

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書誌事項

公開日
2013-11
資源種別
journal article
権利情報
  • This is the peer reviewed version of the following article: [Physica Status Solidi (A), Volume210, Issue11, November 2013, Pages 2395-2398], which has been published in final form at https://doi.org/10.1002/pssa.201329319. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
  • The full-text file will be made open to the public on 20 November 2014 in accordance with publisher's 'Terms and Conditions for Self-Archiving'.
  • This is not the published version. Please cite only the published version.
  • この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
DOI
  • 10.1002/pssa.201329319
公開者
Wiley

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説明

Thin films of cuprous iodide (CuI), which is expected to be used in solid‐state dye‐sensitized solar cells as a hole conductor, were formed by spin coating and subsequent annealing. The effects of the annealing conditions on the electrical properties of the CuI films were investigated by resistivity and Hall‐effect measurements. The CuI films showed p‐type conduction with resistivities of 0.3–5 Ω cm, carrier concentrations of 1 × 10¹⁸–1 × 10¹⁹ cm⁻³ and mobilities of 0.5–2 cm² V⁻¹. It was found that the resistivities of the films annealed in air were slightly lower than those annealed in an Ar atmosphere because the carrier concentrations were higher in the former than in the latter. An increase in the mobility with the rise of annealing temperature was observed in the films annealed in Ar. However, annealing in air at high temperatures oxidized CuI to CuO.

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