Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method
この論文をさがす
抄録
Nonlinear voltage transfer characteristics in GaAs-based three-branch nanowire junction (TBJ) devices were investigated by a light-induced local conductance modulation method. In this measurement system, the conductance in the device was locally increased by focused laser light irradiation. The nonlinear transfer curve was greatly changed when the laser light was irradiated on the positively biased branch. The conductance domain was found to exist at the end of the positively biased branch of the TBJ by scanning the light position. When a SiNx thin layer was deposited on the nanowire surface, the surface potential was increased and the nonlinearity in the transfer curve was reinforced simultaneously. The obtained results suggest that the asymmetric channel depletion model is appropriate for the observed nonlinearity mechanism in the GaAs TBJ at room temperature.
収録刊行物
-
- Japanese Journal of Applied Physics(JJAP)
-
Japanese Journal of Applied Physics(JJAP) 52 (6), 06-, 2013-06
IOP Publishing
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1050845763954148608
-
- NII論文ID
- 120006324924
- 40019677761
-
- NII書誌ID
- AA12295836
-
- ISSN
- 13474065
- 00214922
-
- HANDLE
- 2115/66634
-
- NDL書誌ID
- 024643875
-
- 本文言語コード
- en
-
- 資料種別
- journal article
-
- データソース種別
-
- IRDB
- NDL
- CiNii Articles