Wide-bandgap GaN-based watt-class photonic-crystal lasers
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- 江本, 渓
- Research & Development Laboratory, Stanley Electric Co., Ltd.; Department of Electronic Science and Engineering, Kyoto University
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- ⼩泉, 朋朗
- Research & Development Laboratory, Stanley Electric Co., Ltd.; Department of Electronic Science and Engineering, Kyoto University
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- 廣瀬, 正輝
- Department of Electronic Science and Engineering, Kyoto University
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- 十鳥, 雅弘
- Department of Electronic Science and Engineering, Kyoto University
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- 井上, 卓也
- Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University
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- 石﨑, 賢司
- Department of Electronic Science and Engineering, Kyoto University
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- デ ゾイサ, メーナカ
- Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University
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- 十川, 博行
- Research & Development Laboratory, Stanley Electric Co., Ltd.
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- 野田, 進
- Department of Electronic Science and Engineering, Kyoto University; Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University
説明
Short-wavelength (blue-violet-to-green) lasers with high power and high beam quality are required for various applications including the machining of difficult-to-process materials and high-brightness illuminations and displays. Promising light sources for such applications are wide-bandgap GaN-based photonic-crystal surface-emitting lasers (PCSELs), which are based on two-dimensional resonance in the photonic crystal. Developments of these devices have lagged behind those of longer-wavelength GaAs-based PCSELs, because device designs for achieving robust two-dimensional resonance and a nanofabrication process that avoids introducing disorders have remained elusive for wide-bandgap GaN-based materials. Here, we address these issues and successfully realize GaN-based PCSELs with high, watt-class (>1 W) output power and a circular, single-lobed beam with a very narrow (~0.2°) divergence angle at blue wavelengths. In addition, we demonstrate continuous-wave operation with a high output power (~320 mW) and a high beam quality (M²~1). Our results will enable the use of GaN-based PCSELs in the above-mentioned applications.
収録刊行物
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- Communications Materials
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Communications Materials 3 72-, 2022
Springer Nature
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詳細情報 詳細情報について
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- CRID
- 1050856970555347328
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- ISSN
- 26624443
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- HANDLE
- 2433/277043
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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