Thermally activated plastic deformation of Si single crystals at temperatures above 1173K

機関リポジトリ (HANDLE) オープンアクセス

この論文をさがす

説明

The effect of high-temperature heat treatment during production on the mechanical property of Si wafer, namely yield stress, was studied through tensile tests of Si single crystals at 1123–1373 K, where stress–strain curves were obtained along the [1¯34], [011], [001], and [1¯11] directions. The critical resolved shear stress showed a remarkable temperature dependence, and it decreased with increasing test temperature. Below 1348 K, the activation enthalpy determined through strain rate jump tests showed no significant difference between crystals made by the Chokralski and the floating zone methods. This indicated that the solute oxygen does not influence the thermally activated dislocation glides. The activation enthalpy of 4.9 eV for a dislocation glide was much higher than that reported by previous studies (2.2 eV at temperatures below 1100 K), indicating that the thermal activation of dislocation glide is different from kink-pair nucleation. It was found that self-diffusion can assist the dislocation glide at temperatures above 1130 K.

収録刊行物

関連プロジェクト

もっと見る

詳細情報 詳細情報について

  • CRID
    1050862389935063936
  • NII書誌ID
    AA12295836
  • ISSN
    13474065
    00214922
  • HANDLE
    2324/7169365
  • 本文言語コード
    en
  • 資料種別
    journal article
  • データソース種別
    • IRDB

問題の指摘

ページトップへ