Degradation of inversion layer electron mobility due to interface traps in metal-oxide-semiconductor transistors

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書誌事項

タイトル別名
  • Degradation of inversion layer electron mobility due to interface traps in metaloxide‐semiconductor transistors
公開日
1995-09
資源種別
journal article
権利情報
  • © 1995 American Institute of Physics
  • Reprinted with permission from [Toshimasa Matsuoka, Shigenari Taguchi, Quazi Deen Mohd Khosru, Kenji Taniguchi, and Chihiro Hamaguchi, Journal of Applied Physics, Vol78., 3252-3257, (1995)]. Copyright [1995], American Institute of Physics.
DOI
  • 10.1063/1.360013
公開者
AIP Publishing

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説明

Degradation of inversion layer electron mobility during Fowler–Nordheim electron injection has been investigated using n‐channel metal‐oxide‐semiconductor transistors. The change of the reciprocal effective mobility, Δ(1/μEFF), has been found to be linearly related to the generated interface trap density, ΔN it, at a given effective electric field normal to the Si/SiO2 interface. The effect of trapped charges in the oxide on the mobility degradation is rather insignificant, which is attributed to the location of trapped charges from the Si/SiO2 interface. The dependence of mobility degradation on inversion layer electron density has also been explained using a transport theory based on two‐dimensional electron gas.

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