Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

DOI Web Site Open Access

Yuichi Oshima

National Institute for Materials Science
Elaheh Ahmadi
Stephen Kaun
Feng Wu
James S Speck

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 (1), 15013-15013, 2017-11-22

IOP Publishing

Keywords

β-Ga2O3
MBE

Details 詳細情報について

CRID

1050863629123075840
ISSN

02681242
DOI

10.48505/nims.4360
Web Site

https://mdr.nims.go.jp/pid/8aa2e172-638d-4607-af4d-67df1403fa12
Text Lang

en
Article Type

journal article
Data Source
- IRDB

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