Low-temperature deposition of preferentially oriented polycrystalline silicon films and the properties

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Bibliographic Information

Title
Low-temperature deposition of preferentially oriented polycrystalline silicon films and the properties
Other Title
  • 高配向多結晶シリコン膜の低温堆積とその性質
  • コウハイコウ タケッショウ シリコンマク ノ テイオン タイセキ ト ソノ セイシツ
Author
Syed Moniruzzaman
Alias Name
  • サイヤッド モニルザマン
University
金沢大学
Types of degree
博士 (学術)
Grant ID
甲第1669号
Degree year
1999-03-25

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Description

博士論文

資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
博士論文

Table of Contents

ABSTRACT

Contents

CHAPTER 1 INTRODUCTION

1.1 Background

1.2 Low-temperature Growth of poly-Si films

1.3 Purpose and Organization of this thesis

References

CHAPTER 2 POLY-Si FILM FABRICATION METHOD

2.1 Plasma CVD

2.2 Chemical Reactions Used in CVD

2.3 Growth Kinetics of PECVD

CHAPTER 3 EXPERIMENTAL WORK AND METHOD USED

3.1 Raman Scattering Measurements

3.2 X-ray diffraction(XRD)Measurements

3.3 Substrate Cleaning

3.4 Film Thickness Measurements

3.5 Stress Measurements

3.6 ESR Measurements

3.7 FT/IR measurements

3.8 Atomic Force Microscope(AFM)

CHAPTER 4 EFFECTS OF THE ADDITION OF SiF₄ TO THE SiH₄ FEED GAS FOR DEPOSITING POLYCRYSTALLINE SILICON FILMS AT LOW TEMPERATURE

4.1 Background

4.2 Experimental

4.3 Results

4.4 Discussion

4.5 Concluding Summary

CHAPTER 5 STRUCTURE OF POLYCRYSTALLINE SILICON FILMS DEPOSITED AT LOW TEMPERATURE BY PLASMA CVD ON SUBSTRATES EXPOSED TO DIFFERENT PLASMA

5.1 Background

5.2 Experimental

5.3 Results and Discussion

5.4 Concluding Summary

CHAPTER 6 TEMPERATURE EFFECTS ON THE STRUCTURE OF POLYCRYSTALLINE SILICON FILMS BY GLOW-DISCHARGE DECOMPOSITION USING SiH₄/SiF₄

6.1 Background

6.2 Experimental

6.3 Results and Discussion

6.4 Concluding Summary

CHAPTER 7 SUMMARY

ACKNOWLEDGEMENTS

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