Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

Öztürk, M. C., Electrochemical Society. Meeting, Electrochemical Society

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

CiNii 所蔵館 1館

書誌事項

タイトル: "Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment"

責任表示: editors, M. C. Öztürk ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials

出版者

Electrochemical Society

出版年月

c2007

書籍サイズ: 23 cm

この図書・雑誌をさがす

注記

Includes bibliographical references and indexes

"The international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Prosesses and Equipment, 3 will be held in May 6-10, 2007 in Chicago, the financial, business, and cultural capital of the Midwest as a part of the 211th Meeting of the Electrochemical Society" -- iii p.

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

書誌事項

この図書・雑誌をさがす

注記

関連図書・雑誌

詳細情報詳細情報について

書き出し

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

書誌事項

この図書・雑誌をさがす

注記

関連図書・雑誌

詳細情報 詳細情報について

書き出し

詳細情報詳細情報について