Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

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Bibliographic Information

Title
"Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment"
Statement of Responsibility
editors, P.J. Timans ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials
Publisher
  • Electrochemical Society
Publication Year
  • c2008
Book size
23 cm

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Notes

Includes bibliographical references and indexes

Other editors: E. P. Gusev, H. Iwai, D.-L. Kwong, M. C. Öztürk, F. Roozeboom

"From May 18-22, 2008, the international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Prosesses and Equipment, 4 will be held in Phoenix, the capital and the industrial and commercial center of Arizona (USA), as a part of the 213th Meeting of the Electrochemical Society" -- iii p.

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Details 詳細情報について

  • CRID
    1130282271076031616
  • NII Book ID
    BA86187918
  • ISBN
    9781566776264
  • Text Lang
    en
  • Country Code
    us
  • Title Language Code
    en
  • Place of Publication
    • Pennington, NJ
  • Data Source
    • CiNii Books
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