Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment
CiNii
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Bibliographic Information
- Title
- "Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment"
- Statement of Responsibility
- editors, P.J. Timans ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials
- Publisher
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- Electrochemical Society
- Publication Year
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- c2008
- Book size
- 23 cm
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Notes
Includes bibliographical references and indexes
Other editors: E. P. Gusev, H. Iwai, D.-L. Kwong, M. C. Öztürk, F. Roozeboom
"From May 18-22, 2008, the international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Prosesses and Equipment, 4 will be held in Phoenix, the capital and the industrial and commercial center of Arizona (USA), as a part of the 213th Meeting of the Electrochemical Society" -- iii p.
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Details 詳細情報について
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- CRID
- 1130282271076031616
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- NII Book ID
- BA86187918
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- ISBN
- 9781566776264
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- Text Lang
- en
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- Country Code
- us
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- Title Language Code
- en
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- Place of Publication
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- Pennington, NJ
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- Data Source
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- CiNii Books