Thiadiazole-fused Quinoxalineimide as an Electron-deficient Building Block for N-type Organic Semiconductors
-
- Tsukasa Hasegawa
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
-
- Minoru Ashizawa
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
-
- Koutarou Aoyagi
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
-
- Hiroyasu Masunaga
- Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1 Kouto, Sayo, Sayo 679-5198, Japan
-
- Takaaki Hikima
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo, Sayo 679-5148, Japan
-
- Hidetoshi Matsumoto
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
書誌事項
- 公開日
- 2017-05-31
- 資源種別
- journal article
- DOI
-
- 10.1021/acs.orglett.7b01424
- 公開者
- American Chemical Society (ACS)
この論文をさがす
説明
A strong electron-accepting planar π-conjugated framework, thiadiazole-fused quinoxalineimide (TQI), was designed and synthesized. Three TQI-based small molecules exhibit deep lowest-unoccupied molecular orbital (LUMO) levels, which require air stable n-channel conduction (∼-4.0 eV). Among these molecules, Hex-TQI-Br exhibits air-stable n-channel charge transport with a moderate mobility of 0.044 cm
収録刊行物
-
- Organic Letters
-
Organic Letters 19 (12), 3275-3278, 2017-05-31
American Chemical Society (ACS)
