Raman Characterization of ABA- and ABC-Stacked Trilayer Graphene
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- Chunxiao Cong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
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- Ting Yu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
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- Kentaro Sato
- Department of Physics, Tohoku University, Sendai, Miyagi 9808578 Japan
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- Jingzhi Shang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
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- Riichiro Saito
- Department of Physics, Tohoku University, Sendai, Miyagi 9808578 Japan
書誌事項
- 公開日
- 2011-10-11
- 資源種別
- journal article
- DOI
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- 10.1021/nn203472f
- 公開者
- American Chemical Society (ACS)
この論文をさがす
説明
Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively.
収録刊行物
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- ACS Nano
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ACS Nano 5 (11), 8760-8768, 2011-10-11
American Chemical Society (ACS)
