Quantitative analysis of anisotropic magnetoresistance in Co2MnZ and Co2FeZ epitaxial thin films: A facile way to investigate spin-polarization in half-metallic Heusler compounds

DOI PDF 被引用文献43件 参考文献22件
  • Y. Sakuraba
    National Institute for Materials Science (NIMS) 1 , Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
  • S. Kokado
    Graduate School of Engineering, Shizuoka University 2 , Hamamatsu 432-8561, Japan
  • Y. Hirayama
    National Institute for Materials Science (NIMS) 1 , Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
  • T. Furubayashi
    National Institute for Materials Science (NIMS) 1 , Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
  • H. Sukegawa
    National Institute for Materials Science (NIMS) 1 , Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
  • S. Li
    National Institute for Materials Science (NIMS) 1 , Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
  • Y. K. Takahashi
    National Institute for Materials Science (NIMS) 1 , Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
  • K. Hono
    National Institute for Materials Science (NIMS) 1 , Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan

書誌事項

公開日
2014-04-28
資源種別
journal article
DOI
  • 10.1063/1.4874851
公開者
AIP Publishing

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説明

<jats:p>Anisotropic magnetoresistance (AMR) effect has been systematically investigated in various Heusler compounds Co2MnZ and Co2FeZ (Z = Al, Si, Ge, and Ga) epitaxial films and quantitatively summarized against the total valence electron number NV. It was found that the sign of AMR ratio is negative when NV is between 28.2 and 30.3, and turns positive when NV becomes below 28.2 and above 30.3, indicating that the Fermi level (EF) overlaps with the valence or conduction band edges of half-metallic gap at NV ∼ 28.2 or 30.3, respectively. We also find out that the magnitude of negative AMR ratio gradually increases with shifting of EF away from the gap edges, and there is a clear positive correlation between the magnitude of negative AMR ratio and magnetoresistive output of the giant magnetoresistive devices using the Heusler compounds. This indicates that AMR can be used as a facile way to optimize a composition of half-metallic Heusler compounds having a high spin-polarization at room temperature.</jats:p>

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