High quality semipolar (11¯02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities
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- S. Ichikawa
- Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
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- Y. Iwata
- Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
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- M. Funato
- Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
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- S. Nagata
- JFE Mineral Co. Ltd. 2 , Chiba 260-0826, Japan
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- Y. Kawakami
- Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
説明
<jats:p>Adjusting the growth conditions from those for c-plane growth realizes high-quality semipolar (11¯02) AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces on AlN substrates. Upon comparing the optical properties to those of c-plane QWs using time-integrated and time-resolved photoluminescence spectroscopy, the estimated internal electric field is much smaller in (11¯02) AlGaN/AlN QWs than in c-plane QWs. Thus, (11¯02) AlGaN/AlN QWs have narrower emission line widths and remarkably faster radiative recombination lifetimes, realizing highly efficient deep ultraviolet emissions.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 104 (25), 252102-, 2014-06-23
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360002217102005888
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- ISSN
- 10773118
- 00036951
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- データソース種別
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- Crossref
- KAKEN