Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

  • Rai Moriya
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Takehiro Yamaguchi
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Yoshihisa Inoue
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Sei Morikawa
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Yohta Sata
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Satoru Masubuchi
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Tomoki Machida
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

Description

<jats:p>Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 105 simultaneously with a large current density of ∼104 A/cm2, thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor.</jats:p>

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