The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

DOI Web Site Web Site 被引用文献6件 参考文献21件

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公開日
1981-06-01
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.20.l455
公開者
IOP Publishing

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説明

<jats:p> Ultrahigh two-dimensional electron gas mobilities of 244,000 cm<jats:sup>2</jats:sup>/Vs at 5 K and 117,000 cm<jats:sup>2</jats:sup>/Vs at 77 K with a sheet electron concentration of about 4.9×10<jats:sup>11</jats:sup> cm<jats:sup>-2</jats:sup> were achieved in a selectively doped GaAs/<jats:italic>N</jats:italic>-Al<jats:sub> <jats:italic>x</jats:italic> </jats:sub>Ga<jats:sub>1-<jats:italic>x</jats:italic> </jats:sub>As (<jats:italic>x</jats:italic>=0.26) heterostructure grown at a “medium” temperature of 580°C by MBE. The mobility obtained at 5 K is much higher that any yet reported for MBE-grown semiconductor materials. </jats:p>

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