Correlation between Infrared-Light Scattering and Absorption Images in an In-Doped LEC GaAs Crystal
説明
<jats:p> Infrared light scattering tomography combined with infrared absorption imaging is developed for characterization of semi-insulating GaAs crystals to take simultaneously both the IR absorption and light scattering images. Very close correlation of many dislocation lines and point defects was found between these images in a semi-insulating In-doped LEC GaAs crystal grown from a stoichiometric melt, while a few dislocation lines showed only light scattering of 1.15 µm laser beam. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 25 (4A), L316-, 1986-04-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003446838688384
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- NII論文ID
- 210000024897
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- ISSN
- 13474065
- 00214922
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- データソース種別
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