説明
<jats:p> A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been introduced for growing GaAlAs/GaAs wafers with a thick active layer (<jats:italic>d</jats:italic>\cong3 µm) and multilayer Bragg reflectors for surface emitting lasers. A nominal threshold current density as low as 3.6 kA/cm<jats:sup>2</jats:sup> µm was obtained in stripe cleaved lasers with a cavity length of 400 µm. GaAlAs/GaAs surface emitting lasers were fabricated by using these MOCVD grown wafers. The room-temperature pulsed operation of an MOCVD grown laser was obtained with a threshold current of 300 mA as a primary demonstration. In addition, a reflectivity of 97% was achieved by a Zn-doped 30 layer Ga<jats:sub>0.9</jats:sub>Al<jats:sub>0.1</jats:sub>As/AlAs Bragg reflector. These experimental results suggest the possibilities of a low-threshold surface emitting laser grown by MOCVD and potential applications toward integrated optics based on surface emitting lasers. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 26 (7R), 1077-, 1987-07-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003446838775936
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- NII論文ID
- 210000025159
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- ISSN
- 13474065
- 00214922
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- データソース種別
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