YBa2Cu3O7-x Thin Film Prepared by Laser Ablation

Tatsuoki Nagaishi, Hideo Itozaki, Saburo Tanaka, Takashi Matsuura, Nobuhiro Ota, Naoji Fujimori Naoji Fujimori, Shuji Yazu Shuji Yazu

doi:10.1143/jjap.30.l718

<jats:p> High critical current density YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>7-<jats:italic>x</jats:italic> </jats:sub> thin films on (100)SrTiO<jats:sub>3</jats:sub> were successfully prepared by laser ablation. The zero resistance transition temperature (<jats:italic>T</jats:italic> <jats:sub>c</jats:sub>(<jats:italic>R</jats:italic>=0)) was 90.5 K and the critical current density (<jats:italic>J</jats:italic> <jats:sub>c</jats:sub>) at 77.3 K was 8.0×10<jats:sup>6</jats:sup> A/cm<jats:sup>2</jats:sup> under a zero magnetic field. <jats:italic>J</jats:italic> <jats:sub>c</jats:sub> degraded to 1.7×10<jats:sup>4</jats:sup> A/cm<jats:sup>2</jats:sup> in a magnetic field of 8 T parallel to the <jats:italic>c</jats:italic>-axis of the film, and to 4.0×10<jats:sup>5</jats:sup> A/cm<jats:sup>2</jats:sup> in a magnetic field of 8 T perpendicular to the <jats:italic>c</jats:italic>-axis of the film. The characteristics of the film, mis-oriented crystallites and stacking faults, were revealed by transmission electron microscopy (TEM). </jats:p>

YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> Thin Film Prepared by Laser Ablation

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