Effect of Silver Dopant on Optical and Electrical Properties of Solution-Grown Cadmium Selenide Thin Films

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<jats:p> In the present study, n-type thin films of CdSe have been grown onto glass substrates by using a solution growth technique. Different doping concentrations of Ag were doped in pure CdSe films, and the effects on the optoelectronic properties were observed. The optical band gaps (<jats:italic>E</jats:italic> <jats:sub>g</jats:sub>) of these films were found to be dependent on doping concentration i.e., they decrease from 1.70±0.02 eV to 1.50±0.03 eV as doping concentration increases from 0.1 wt% to 25 wt%. Other optical parameters such as absorption coefficient, α, refractive index `<jats:italic>n</jats:italic>' and dielectric constant `ε' were also computed. The electrical conductivity of pure CdSe films was obtained as 10<jats:sup>-7</jats:sup> Ω<jats:sup>-1</jats:sup> cm<jats:sup>-1</jats:sup> while doped films have 10<jats:sup>-4</jats:sup> Ω<jats:sup>-1</jats:sup> cm<jats:sup>-1</jats:sup>. Thermal activation energy of these films was estimated. Carrier concentration, mobility, thermoelectric power and photosensitivity were also studied at different dopant concentrations. </jats:p>

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