Depth Profile Measurement of Activated Boron-Concentration in Diamond Thin Films Utilizing Schottky Diode C-V Curves

DOI Web Site Web Site 被引用文献1件 参考文献12件

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公開日
1993-11-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.32.l1588
公開者
IOP Publishing

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説明

<jats:p> The depth profiles of activated boron concentration <jats:italic>N</jats:italic> <jats:sub>B</jats:sub> in the Al/p<jats:sup>+</jats:sup>-diamond Schottky diodes were systematically investigated from the junction capacitance-voltage (<jats:italic>C</jats:italic>-<jats:italic>V</jats:italic>) curves. The observed 1/<jats:italic>C</jats:italic> <jats:sup>2</jats:sup> vs <jats:italic>V</jats:italic> plot did not fall on straight lines, indicating a nonuniform depth profile of <jats:italic>N</jats:italic> <jats:sub>B</jats:sub>. Using these <jats:italic>C</jats:italic>-<jats:italic>V</jats:italic> curves, activated boron concentration <jats:italic>N</jats:italic> <jats:sub>B</jats:sub> profiles were obtained. From the outermost surface to 50∼300-nm-deep layers (depending upon the original doping amount), <jats:italic>N</jats:italic> <jats:sub>B</jats:sub> decreased by two∼three orders of magnitude from its original value. This kind of abrupt profile developed only in regions in contact with Al. </jats:p>

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