Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN

Jun Kikuchi, Yuuki Nishizawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu

doi:10.1143/jjap.45.l1203

Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN

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The hydride vapor phase epitaxy (HVPE) of InN with various configurations was studied by thermodynamic analysis. For the high-speed growth of InN, analyses of the source zone and InN growth zone were performed. It was shown that the use of Cl2 instead of HCl as a chlorine source is necessary for the HVPE of InN. An additional supply of Cl2 was found to be effective for the preferential generation of a reactive InCl3 precursor. A new system, the (In–Cl2)–Cl2–NH3 system, was proposed for the HVPE of InN with a high growth rate.