High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate

DOI DOI Web Site Web Site 被引用文献6件 参考文献13件

書誌事項

公開日
2007-04-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.46.2316
  • 10.7567/ssdm.2006.e-10-3
公開者
IOP Publishing

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説明

We have succeeded in obtaining the high critical electric field exceeding 8 MV/cm measured using an AlGaN p–i–n vertical conducting diode on n-SiC substrate grown by low-pressure metal organic vapor phase epitaxy. The critical electric field of AlGaN with Al composition of 57% is as high as 8.1 MV/cm, the highest among semiconductors with a doping concentration of less than 1017 cm-3, at which the avalanche multiplication process takes place. The critical electric field is proportional to the bandgap energy to a power of 2.7. In the forward current-voltage characteristics, the on-state resistance of the diode increases with increasing Al composition. Since there is a tradeoff between the breakdown voltage (VB) and the on-state resistance (Ron), the figure of merit VB2/Ron has its maximum when the Al composition is about 30% and is twice as high as that for GaN-based diodes. This indicates that AlGaN-based electronic devices are more promising for high-power operation than GaN-based ones.

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