AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates

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Severe growth irregularity usually encountered in AlN growth on patterned sapphire substrates (PSSs) was completely suppressed in hydride vapor phase epitaxial (HVPE) growth on a PSS having small cone-pattern with a height of 220 nm. At low temperature, the AlN growth on the PSS led to a formation of regular array of hexagonal AlN nano-rods on the cone-tops. At high temperatures, the growth mode turned into a layered fashion and a void-less AlN template with an atomically smooth surface and high crystal quality were realized with an HVPE growth thickness less than 1 μm.

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