[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

2012-04-01

Bibliographic Information

Other Title
  • Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

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Details

  • CRID
    1360003449885614336
  • NII Article ID
    210000140476
  • DOI
    10.7567/jjap.51.04da05
  • ISSN
    13474065
    00214922
  • Data Source
    • Crossref
    • CiNii Articles

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