Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 51 (4S), 04DA05-, 2012-04-01
IOP Publishing
