Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

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<jats:p> In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal–oxide–semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (<jats:italic>V</jats:italic> <jats:sub>th</jats:sub>) variation, of the fabricated ALD and physical-vapor-deposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small <jats:italic>L</jats:italic> <jats:sub>g</jats:sub> region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller <jats:italic>V</jats:italic> <jats:sub>th</jats:sub> variation than the PVD-TiN gate FinFETs. </jats:p>

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