EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz

DOI Web Site Web Site 被引用文献3件 参考文献23件

書誌事項

公開日
2017-11
資源種別
journal article
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
  • https://www.elsevier.com/legal/tdmrep-license
  • http://www.elsevier.com/open-access/userlicense/1.0/
DOI
  • 10.1016/j.mssp.2016.11.013
公開者
Elsevier BV

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説明

Abstract Impact of a local bonding structure in a Si y Ge 1-y-z Sn z thin film on the stabilization of substitutional Sn has been investigated. Ge 1-x Sn x group-IV alloy is widely studied especially for optoelectronic devices as it can become a direct bandgap semiconductor material. This transition requires introduction of Sn more than its solubility limit. Although non-equilibrium growth techniques enable to incorporate a lot of Sn in Ge, attempts of Sn stabilization to prevent Sn precipitation during a fabrication process or device operation have been reported only a few. We found that Sn atom in Ge matrix can be energetically stabilized by introduction of Si and reduction of compressive strain applied from a substrate. Extended X-ray absorption fine structure study revealed that Si-Sn bond is hardly formed in the Si y Ge 1-y-z Sn z thin film, rather, a Sn atom locates at the 2nd nearest neighbor position of a Si atom. These results indicated that the Si-Ge-Sn local bonding structure contributes to the stabilization of Sn at a substitutional site by releasing a local strain around Sn atoms.

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