Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

  • H. Kraus
    Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
  • D. Simin
    Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
  • C. Kasper
    Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
  • Y. Suda
    Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515, Japan
  • S. Kawabata
    Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515, Japan
  • W. Kada
    Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515, Japan
  • T. Honda
    National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
  • Y. Hijikata
    Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
  • T. Ohshima
    National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
  • V. Dyakonov
    Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
  • G. V. Astakhov
    Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany

書誌事項

公開日
2017-04-10
資源種別
journal article
DOI
  • 10.1021/acs.nanolett.6b05395
公開者
American Chemical Society (ACS)

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説明

Constructing quantum devices comprises various challenging tasks, especially when concerning their nanoscale geometry. For quantum color centers, the traditional approach is to fabricate the device structure after the nondeterministic placement of the centers. Reversing this approach, we present the controlled generation of quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material's stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. We identify the generated centers as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess a long spin-echo coherence time of 42 ± 20 μs at room temperature. Our approach hence enables the fabrication of quantum hybrid nanodevices based on SiC platform, where spin centers are integrated into p-i-n diodes, photonic cavities, and mechanical resonators.

収録刊行物

  • Nano Letters

    Nano Letters 17 (5), 2865-2870, 2017-04-10

    American Chemical Society (ACS)

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