Optical Study of Sub-10 nm In<sub>0.3</sub>Ga<sub>0.7</sub>N Quantum Nanodisks in GaN Nanopillars
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- Takayuki Kiba
- Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami 090-8507, Japan
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- Shula Chen
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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- Yafeng Chen
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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- Junichi Takayama
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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- Ichiro Yamashita
- Nara Institute of Science and Technology, Ikoma 630-0101, Japan
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- Akihiro Murayama
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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説明
We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrodinger equation. These results pave the way for the fabrication of large-scale III–N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.
収録刊行物
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- ACS Photonics
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ACS Photonics 4 (7), 1851-1857, 2017-06-21
American Chemical Society (ACS)
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詳細情報 詳細情報について
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- CRID
- 1360004233154007808
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- ISSN
- 23304022
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- 資料種別
- journal article
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- データソース種別
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- Crossref
- KAKEN
- OpenAIRE
