Solution-Processed and Air-Stable n-Type Organic Thin-Film Transistors Based on Thiophene-Fused Dicyanoquinonediimine (DCNQI) Deriatives
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- Shiyan Chen
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Key Laboratory of Textile Science & Technology (Ministry of Education), College of Materials Science and Engineering, Donghua University, Shanghai 201620, P.R. China
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- Yan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, China
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- Altan Bolag
- Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
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- Jun-ichi Nishida
- Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
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- Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, China
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- Yoshiro Yamashita
- Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
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説明
π-Conjugated systems 2a and 2b containing thiophene-fused DCNQI with long alkyl and trifluoromethylphenyl groups were synthesized as potential active materials for solution-processed and air-stable n-type organic thin-film transistors (OTFTs). The electrochemical measurements revealed that the lowest unoccupied molecular orbital (LUMO) of the compounds have an energy level less than -4.0 eV, indicating air stable n-type materials. The long alkyl groups endowed the compounds good solubility and solution-processability. X-ray diffraction measurements revealed the difference of the molecular arrangement depending on the alkyl groups, which were also observed in the UV-vis absorptions of the films. A relatively good mobility up to 0.003 cm(2) V(-1) s(-1) for 2a by spin-coating was obtained with good air stability.
収録刊行物
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- ACS Applied Materials & Interfaces
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ACS Applied Materials & Interfaces 4 (8), 3994-4000, 2012-08-10
American Chemical Society (ACS)
