Improvement of Plasmon-Enhanced Photocurrent Generation by Interference of TiO<sub>2</sub> Thin Film

  • Xu Shi
    Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
  • Kosei Ueno
    Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
  • Tomoya Oshikiri
    Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
  • Hiroaki Misawa
    Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan

書誌事項

公開日
2013-11-18
資源種別
journal article
DOI
  • 10.1021/jp408472g
公開者
American Chemical Society (ACS)

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説明

In this study, we demonstrated an improvement in the plasmon-enhanced photocurrent generation due to Fabry–Perot interference of titanium dioxide (TiO2) thin-film electrodes loaded with Au nanoislands (Au-NIs). TiO2 thin films with thicknesses of 215–274 nm, which show obvious Fabry–Perot interference, were deposited via atomic layer deposition (ALD) onto silica glass and were modified by the deposition of Au-NIs onto their surface. Anodic plasmon-enhanced photocurrent generation was observed over the Au-NIs-loaded TiO2 thin-film photoelectrodes. The incident photon to current efficiency (IPCE) action spectra correlated strongly with the Au-NIs plasmon resonance and exhibited a strong dependence on the thickness of the TiO2 thin film. The photocurrent conversion efficiency increased when the transmission constructive interference wavelength overlapped with the Au-NIs plasmon resonance band. This work provides a simple and applicable approach for the further design of low-cost and lightweight plasmon-enhan...

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